Simulation of silicon n<sup>+</sup>np<sup>+</sup>, p<sup>+</sup>pn<sup>+</sup> and Schottky TRAPATT diodes
نویسندگان
چکیده
منابع مشابه
Graphene-silicon Schottky diodes.
We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...
متن کاملJunction investigation of graphene/silicon Schottky diodes
Here we present a facile technique for the large-scale production of few-layer graphene flakes. The as-sonicated, supernatant, and sediment of the graphene product were respectively sprayed onto different types of silicon wafers. It was found that all devices exhibited current rectification properties, and the supernatant graphene devices have the best performance. Schottky junctions formed bet...
متن کاملMolecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results
There is considerable current interest in using molecular materials to influence the surface potential of semiconductor devices for nanoelectronic and sensing applications. We present experimental capacitance-voltage results showing that systematic Schottky barrier height modulation can be achieved using dipolar molecular layers in gold-molecule-silicon devices. A computational methodology that...
متن کاملCharacterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy
Articles you may be interested in Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes Appl.
متن کاملCapacitance spectroscopy in hydrogenated amorphous silicon Schottky diodes and high efficiency silicon heterojunction solar cells
In this thesis, research on a-Si:H Schottky diodes and a-Si:H/c-Si heterojunctions is presented with the focus on the capacitance spectroscopy and information on electronic properties that can be derived from this technique. Last years a-Si:H/c-Si heterojunctions (HJ) have received growing attention as an approach which combines wafer and thin film technologies due to their low material consump...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Lithuanian Journal of Physics
سال: 2014
ISSN: 1648-8504
DOI: 10.3952/lithjphys.54202